Industry Power Density Roadmap
Silicon has provided us the pathway for power conversion solution for several now reached its physical limits GaN and SiC open new possibilities.
- Sic
- -for high performance market released as Schottky diode, JFET and MOSFET Target application by 1200V
- GaN on Si
- -high performance solution with low cost for diodes and transistors
- GaN on SiC
- -high cost solution for high performance with reduce sensitivity to cost
- GaN on GaN
- -Early stage of development
- Gallium Oxide
- -Very early stage
- Diamond
- -Out there
In the recent decades, the Silicon carbide (SiC),
turned out to be an excellent semiconductor
material. Composed of carbon and silicon, and used
in power applications in which it showed excellent
performance, far superior to those of silicon.
Significant progress has been made in the field of
the semiconductor industry, in which the
technologies for the processing of silicon carbide
have become increasingly more sophisticated, and
have produced semiconductor devices with excellent
performance.
In the facts those devices during the applications
have shown a remarkable capacity to reduce losses
and a high switching speed in comparison to that
offered by silicon. The use of silicon carbide (SiC)
as a semiconductor begins to expand into multiple
applications and always proves to be more and more
the candidate to replace silicon in the most
important applications such as automotive and E-Bike
motor control.
For these reasons, Bruckewell Semi decided to launch
the production of the SiC Products, includign the
SiC Schottky Diode and SiC MOSFET, suport the 650V
to 1200V, and give the opportunity to its customers
to take advantage of the benefits that the products
offer in the SiC high-voltage power applications. So
we are happy to present our SiC products line.
SiC diodes hold 85%
market share, but SiC transistors to reach 27%
share in 2021, says Yole Développement.
